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SOT 23-3
Discrete Semiconductor Products

BAS19LT1

Obsolete
ON Semiconductor

SWITCHING DIODE, HIGH VOLTAGE 120 V

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SOT 23-3
Discrete Semiconductor Products

BAS19LT1

Obsolete
ON Semiconductor

SWITCHING DIODE, HIGH VOLTAGE 120 V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS19LT1
Capacitance @ Vr, F5 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr100 nA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)50 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]120 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BAS19L Series

The high voltage switching diode is designed for high voltage, high speed switching applications. This dual diode device contains two electrically isolated high voltage switching diodes encapsulated in a SOT-23 surface mount package.