Discrete Semiconductor Products

SIZF906DT-T1-GE3

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MOSFET 2N-CH 30V 60A 8POWERPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 60A 8POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF906DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF, 8200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	38 W, 83 W
Rds On (Max) @ Id, Vgs	1.17 mOhm, 3.8 mOhm
Supplier Device Package	8-PowerPair® (6x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power - Max	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIZF906ADT-T1-GE3	MOSFET (Metal Oxide)	8-PowerWDFN	1.17 mOhm 3.8 mOhm	2 N-Channel (Dual) Schottky	2.2 V	-55 °C	150 °C	49 nC 200 nC	Surface Mount	27 A 52 A 60 A	8-PowerPair® (6x5)	2000 pF 8200 pF	30 V	4.5 W 5 W 38 W 83 W
Vishay General Semiconductor - Diodes Division SIZF906DT-T1-GE3	MOSFET (Metal Oxide)	8-PowerWDFN	1.17 mOhm 3.8 mOhm	2 N-Channel (Half Bridge)	2.2 V	-55 °C	150 °C	22 nC	Surface Mount	60 A	8-PowerPair® (6x5)	2000 pF 8200 pF	30 V	38 W 83 W	92 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 60A (Tc) 38W (Tc), 83W (Tc) Surface Mount 8-PowerPair® (6x5)

Technical documentation and resources