SIZF906 Series

Catalog

MOSFET 2N-CH 30V 27A 8POWERPAIR

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power - Max	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIZF906ADT-T1-GE3	MOSFET (Metal Oxide)	8-PowerWDFN	1.17 mOhm 3.8 mOhm	2 N-Channel (Dual) Schottky	2.2 V	-55 °C	150 °C	49 nC 200 nC	Surface Mount	27 A 52 A 60 A	8-PowerPair® (6x5)	2000 pF 8200 pF	30 V	4.5 W 5 W 38 W 83 W
Vishay General Semiconductor - Diodes Division SIZF906DT-T1-GE3	MOSFET (Metal Oxide)	8-PowerWDFN	1.17 mOhm 3.8 mOhm	2 N-Channel (Half Bridge)	2.2 V	-55 °C	150 °C	22 nC	Surface Mount	60 A	8-PowerPair® (6x5)	2000 pF 8200 pF	30 V	38 W 83 W	92 nC