Discrete Semiconductor Products

PBSS5130PAP-QX

Active

30 V, 1 A PNP/PNP LOW VCESAT TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

Documentsplastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Reflow soldering profile +6

Discrete Semiconductor Products

PBSS5130PAP-QX

Active

Nexperia USA Inc.

30 V, 1 A PNP/PNP LOW VCESAT TRANSISTOR

Deep-Dive with AI

Documentsplastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Reflow soldering profile +6

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5130PAP-QX

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	125 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	370 mW
Qualification	AEC-Q101
Supplier Device Package	6-HUSON (2x2)
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	280 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PBSS5130PAP-Q Series

30 V, 1 A PNP/PNP low VCEsat transistor

Part	Operating Temperature	Grade	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Transistor Type	Mounting Type	Qualification
Nexperia USA Inc. PBSS5130PAP-QX	150 °C	Automotive	6-UFDFN Exposed Pad	6-HUSON (2x2)	280 mV	1 A	30 V	250	100 nA	125 MHz	370 mW	2 PNP (Dual)	Surface Mount	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.25

Description

General part information

PBSS5130PAP-Q Series

PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Documents

Technical documentation and resources

plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Marcom graphics

Reflow soldering profile

Reflow soldering

Nexperia package poster

Leaflet

plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Package information

PBSS5130PAP-QX

Deep-Dive with AI

PBSS5130PAP-QX

Deep-Dive with AI

Technical Specifications

PBSS5130PAP-Q Series

Pricing

Description

PBSS5130PAP-Q Series

Documents

plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Reflow soldering profile

Nexperia package poster

plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Questions about package outline drawings

PBSS5130PAP-Q Nexperia Product Reliability

DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation

30 V, 1 A PNP/PNP low VCEsat transistor

PBSS5130PAP-Q Series