Catalog
30 V, 1 A PNP/PNP low VCEsat transistor
Description
AI
PNP/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
30 V, 1 A PNP/PNP low VCEsat transistor
30 V, 1 A PNP/PNP low VCEsat transistor
| Part | Operating Temperature | Grade | Package / Case | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Power - Max [Max] | Transistor Type | Mounting Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | Automotive | 6-UFDFN Exposed Pad | 6-HUSON (2x2) | 280 mV | 1 A | 30 V | 250 | 100 nA | 125 MHz | 370 mW | 2 PNP (Dual) | Surface Mount | AEC-Q101 |