Discrete Semiconductor Products

STT5N2VH5

LTB

MOSFET N-CH 20V SOT23-6

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Discrete Semiconductor Products

LTB

MOSFET N-CH 20V SOT23-6

Technical Specifications

Parameters and characteristics for this part

Specification	STT5N2VH5

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	367 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	700 mV

Part	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STT5N2VH5	SOT-23-6	Surface Mount	2.5 V	4.5 V	SOT-23-6	8 V	700 mV	1.6 W	MOSFET (Metal Oxide)	4.6 nC	N-Channel	30 mOhm	20 V	150 °C	-55 °C	367 pF

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General part information

N-Channel 20 V 5A (Tj) 1.6W (Tc) Surface Mount SOT-23-6

Technical documentation and resources