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Technical Specifications
Parameters and characteristics for this part
| Specification | RFN5B6STL |
|---|---|
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 50 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | CPD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RFN5BM3SFH Series
RFN5BM3SFH is the silicon epitaxial planar type Fast Recovery Diode.
Documents
Technical documentation and resources