Specification	PSMN1R0-40YSHX

Current - Continuous Drain (Id) @ 25°C	290 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	122 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9433 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN1R0-40YSH Series

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Rds On (Max) @ Id, Vgs	Vgs (Max)
Nexperia USA Inc. PSMN1R0-40YSHX	9433 pF	333 W	40 V	175 °C	-55 °C	Surface Mount	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	SOT-1023 4-LFPAK	10 V	290 A	N-Channel	3.6 V	122 nC	Schottky Diode (Body)	1 mOhm	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5562	$ 5.65

Description

General part information

PSMN1R0-40YSH Series

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.