Specification	HN1A01FE-GR,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	100 mW
Qualification	AEC-Q101
Supplier Device Package	ES6
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

HN1A01FE Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-563(ES6)

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Qualification	Supplier Device Package	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage HN1A01FE-Y,LXHF	2 PNP (Dual)	50 V	150 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW	Automotive
Toshiba Semiconductor and Storage HN1A01FE-GR,LF	2 PNP (Dual)	50 V	150 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666		100 nA	100 mW		200 hFE
Toshiba Semiconductor and Storage HN1A01FE-Y,LF	2 PNP (Dual)	50 V	150 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW
Toshiba Semiconductor and Storage HN1A01FE-GR,LXHF	2 PNP (Dual)	50 V	150 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666		100 nA	100 mW	Automotive	200 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-563(ES6)

Technical documentation and resources