Specification	HN1A01FE-Y,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	100 mW
Supplier Device Package	ES6
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

HN1A01FE Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-563(ES6)

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Qualification	Supplier Device Package	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage HN1A01FE-Y,LXHF	2 PNP (Dual)	50 V	150 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW	Automotive
Toshiba Semiconductor and Storage HN1A01FE-GR,LF	2 PNP (Dual)	50 V	150 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666		100 nA	100 mW		200 hFE
Toshiba Semiconductor and Storage HN1A01FE-Y,LF	2 PNP (Dual)	50 V	150 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW
Toshiba Semiconductor and Storage HN1A01FE-GR,LXHF	2 PNP (Dual)	50 V	150 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666		100 nA	100 mW	Automotive	200 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3844	$ 0.30

General part information

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-563(ES6)

Technical documentation and resources