Discrete Semiconductor Products
STL8N6F7
ActiveSTMicroelectronics
N-CHANNEL 60 V, 0.019 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
Discrete Semiconductor Products
STL8N6F7
ActiveSTMicroelectronics
N-CHANNEL 60 V, 0.019 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL8N6F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3 W, 60 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
STL8 Series
N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Qualification | Grade | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 20 V | 60 V | PowerFlat™ (5x6) | 13 nC | 8-PowerVDFN | 5 V 10 V | N-Channel | 175 °C | -55 °C | 2.5 V | AEC-Q101 | Automotive | Surface Mount | 20 A | MOSFET (Metal Oxide) | 668 pF | 65 W | 30 mOhm | |
STMicroelectronics | 20 V | 60 V | PowerFlat™ (3.3x3.3) | 8 nC | 8-PowerVDFN | 10 V | N-Channel | 150 °C | -55 °C | 4 V | Surface Mount | 36 A | MOSFET (Metal Oxide) | 450 pF | 3 W 60 W | 25 mOhm | |||
 STMicroelectronics | 20 V | 100 V | PowerFlat™ (3.3x3.3) | 22 nC | 8-PowerVDFN | 10 V | N-Channel | 150 °C | -55 °C | 4.5 V | Surface Mount | 35 A | MOSFET (Metal Oxide) | 3.5 W 50 W | 20 mOhm | 2000 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL8 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources