BSM150GB170DN2E3256HDLA1

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BSM150GB170DN2 - INSULATED GATE

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Discrete Semiconductor Products

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BSM150GB170DN2 - INSULATED GATE

Technical Specifications

Parameters and characteristics for this part

Specification	BSM150GB170DN2E3256HDLA1

Configuration	2 Independent
Current - Collector Cutoff (Max) [Max]	300 µA
Input	Standard
Input Capacitance (Cies) @ Vce	10000 pF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Module
Power - Max [Max]	1250 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1700 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Configuration	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	Mounting Type	Input	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature
INFINEON BSM150GT120DN2BOSA1
INFINEON BSM150GB60DLCHOSA1	125 °C	-40 C	500 çA	Module	Single	600 V	2.45 V	6.5 nF	Chassis Mount	Standard	595 W	180 A	Module
INFINEON BSM150GB120DLCHOSA1	125 °C	-40 C	5 mA	Module	Half Bridge	1200 V	2.6 V	11 nF	Chassis Mount	Standard	1250 W		Module
INFINEON BSM150GB170DN2E3256HDLA1			300 µA	Module	2 Independent	1700 V	3.2 V	10000 pF	Chassis Mount	Standard	1250 W		Module	150 °C
INFINEON BSM150GB170DN2HOSA1			1.5 mA	Module	Half Bridge	1700 V	3.9 V	20 nF	Chassis Mount	Standard	1250 W	220 A	Module	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3	$ 112.02

General part information

IGBT Module 2 Independent 1700 V 300 A 1250 W Chassis Mount Module

Technical documentation and resources

No documents available