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STY60NK30Z
Discrete Semiconductor Products

STY60NK30Z

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STMicroelectronics

N-CHANNEL 300 V, 33 MOHM TYP., 60 A SUPERMESH POWER MOSFET IN A MAX247 PACKAGE

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STY60NK30Z
Discrete Semiconductor Products

STY60NK30Z

Active
STMicroelectronics

N-CHANNEL 300 V, 33 MOHM TYP., 60 A SUPERMESH POWER MOSFET IN A MAX247 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTY60NK30Z
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs220 nC
Input Capacitance (Ciss) (Max) @ Vds7200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)450 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageMAX247™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 353$ 14.01
NewarkEach 1$ 13.32
10$ 11.49
25$ 10.03
60$ 9.30
120$ 8.09
270$ 6.90

Description

General part information

STY60NK30Z Series

The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.