Discrete Semiconductor Products

2SK2009TE85LF

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MOSFETS N-CH SM SIG FET ID 0.2A 30V 20V

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Discrete Semiconductor Products

Active

MOSFETS N-CH SM SIG FET ID 0.2A 30V 20V

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2009TE85LF

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	70 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	SC-59-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage 2SK2009TE85LF	20 V	1.5 V	N-Channel	30 V	150 °C	200 mW	SC-59-3	Surface Mount	2.5 V	SC-59 SOT-23-3 TO-236-3	70 pF	200 mA	MOSFET (Metal Oxide)	2 Ohm

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General part information

MOSFETS N-CH SM SIG FET ID 0.2A 30V 20V

Technical documentation and resources