2SK2009 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFETS N-CH SM SIG FET ID 0.2A 30V 20V
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 20 V | 1.5 V | N-Channel | 30 V | 150 °C | 200 mW | SC-59-3 | Surface Mount | 2.5 V | SC-59 SOT-23-3 TO-236-3 | 70 pF | 200 mA | MOSFET (Metal Oxide) | 2 Ohm |