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Discrete Semiconductor Products

IPI60R520CPAKSA1

Obsolete
INFINEON

MOSFET N-CH 600V 6.8A TO262-3

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AUIRFSL6535 back
Discrete Semiconductor Products

IPI60R520CPAKSA1

Obsolete
INFINEON

MOSFET N-CH 600V 6.8A TO262-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI60R520CPAKSA1
Current - Continuous Drain (Id) @ 25°C6.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]630 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs520 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPI60R Series

N-Channel 600 V 6.8A (Tc) 66W (Tc) Through Hole PG-TO262-3

Documents

Technical documentation and resources

No documents available