IPI60R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 12A TO262-3

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPI60R250CPAKSA1	650 V	150 °C	-55 °C	12 A	1200 pF	10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	3.5 V	PG-TO262-3	250 mOhm	104 W	35 nC	N-Channel	20 V
INFINEON IPI60R600CPAKSA1	600 V	150 °C	-55 °C	6.1 A		10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	3.5 V	PG-TO262-3	600 mOhm	60 W		N-Channel	20 V	550 pF	27 nC
INFINEON IPI60R520CPAKSA1	600 V	150 °C	-55 °C	6.8 A		10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	3.5 V	PG-TO262-3	520 mOhm	66 W		N-Channel	20 V	630 pF	31 nC
INFINEON IPI60R385CPXKSA1	650 V	150 °C	-55 °C	9 A	790 pF	10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	3.5 V	PG-TO262-3	385 mOhm	83 W	22 nC	N-Channel	20 V