Discrete Semiconductor Products

BY448TAP

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DIODE AVALANCHE 1.5KV 2A SOD57

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Discrete Semiconductor Products

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DIODE AVALANCHE 1.5KV 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BY448TAP

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction	140 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1500 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Speed	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction
Vishay General Semiconductor - Diodes Division BY448GPHE3/73	Standard Recovery >500ns	200 mA	Through Hole	5 µA	Standard	1.6 V	20 µs	Axial DO-15 DO-204AC	1.5 A	175 ░C	-65 C	DO-204AC	DO-15	1650 V
Vishay General Semiconductor - Diodes Division BY448TAP	Standard Recovery >500ns	200 mA	Through Hole	3 µA	Avalanche	1.6 V	2 µs	Axial SOD-57	2 A			SOD-57		1500 V	140 °C
Vishay General Semiconductor - Diodes Division BY448TR	Standard Recovery >500ns	200 mA	Through Hole	3 µA	Avalanche	1.6 V	20 µs	Axial SOD-57	2 A			SOD-57		1500 V	140 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1500 V 2A Through Hole SOD-57

Technical documentation and resources