Discrete Semiconductor Products

BY448TR

Active

DIODE AVALANCHE 1500V 2A SOD57

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE AVALANCHE 1500V 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BY448TR

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction	140 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	20 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1500 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Speed	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction
Vishay General Semiconductor - Diodes Division BY448GPHE3/73	Standard Recovery >500ns	200 mA	Through Hole	5 µA	Standard	1.6 V	20 µs	Axial DO-15 DO-204AC	1.5 A	175 ░C	-65 C	DO-204AC	DO-15	1650 V
Vishay General Semiconductor - Diodes Division BY448TAP	Standard Recovery >500ns	200 mA	Through Hole	3 µA	Avalanche	1.6 V	2 µs	Axial SOD-57	2 A			SOD-57		1500 V	140 °C
Vishay General Semiconductor - Diodes Division BY448TR	Standard Recovery >500ns	200 mA	Through Hole	3 µA	Avalanche	1.6 V	20 µs	Axial SOD-57	2 A			SOD-57		1500 V	140 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1500 V 2A Through Hole SOD-57

Technical documentation and resources