
STD5NM50T4
ObsoletePOWER MOSFET, N CHANNEL, 500 V, 7.5 A, 0.8 OHM, TO-252 (DPAK), SURFACE MOUNT
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STD5NM50T4
ObsoletePOWER MOSFET, N CHANNEL, 500 V, 7.5 A, 0.8 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD5NM50T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.5 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 415 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) @ Id, Vgs | 800 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.87 | |
Description
General part information
STD5NM50 Series
The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Documents
Technical documentation and resources