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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD5NM50T4

Obsolete
STMicroelectronics

POWER MOSFET, N CHANNEL, 500 V, 7.5 A, 0.8 OHM, TO-252 (DPAK), SURFACE MOUNT

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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD5NM50T4

Obsolete
STMicroelectronics

POWER MOSFET, N CHANNEL, 500 V, 7.5 A, 0.8 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD5NM50T4
Current - Continuous Drain (Id) @ 25°C7.5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]415 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)100 W
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.87

Description

General part information

STD5NM50 Series

The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Documents

Technical documentation and resources