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Trans MOSFET N-CH 60V 86A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN1R0-40SSHJ

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 1 MΩ, 325 AMPS CONTINUOUS, STANDARD LEVEL MOSFET IN LFPAK88 USING NEXTPOWERS3 TECHNOLOGY

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Trans MOSFET N-CH 60V 86A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN1R0-40SSHJ

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 1 MΩ, 325 AMPS CONTINUOUS, STANDARD LEVEL MOSFET IN LFPAK88 USING NEXTPOWERS3 TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R0-40SSHJ
Current - Continuous Drain (Id) @ 25°C325 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]137 nC
Input Capacitance (Ciss) (Max) @ Vds10322 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1235
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs1 mOhm
Supplier Device PackageLFPAK88 (SOT1235)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1648$ 4.62

Description

General part information

PSMN1R0-40SSH Series

325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.