Specification	PMG85XP,115

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power Dissipation (Max)	375 mW, 2.4 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.15 V

PMG85XP Series

20 V, 2 A P-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology
Nexperia USA Inc. PMG85XP,115	20 V	150 °C	-55 °C	2 A	Surface Mount	P-Channel	12 V	6-TSSOP SC-88 SOT-363	115 mOhm	2.4 W 375 mW	560 pF	1.15 V	6-TSSOP	7.2 nC	2.5 V	4.5 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	18	$ 0.46
		1652747	$ 0.15

Description

General part information

PMG85XP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.