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20 V, 2 A P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, 2 A P-channel Trench MOSFET
20 V, 2 A P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 150 °C | -55 °C | 2 A | Surface Mount | P-Channel | 12 V | 6-TSSOP SC-88 SOT-363 | 115 mOhm | 2.4 W 375 mW | 560 pF | 1.15 V | 6-TSSOP | 7.2 nC | 2.5 V | 4.5 V | MOSFET (Metal Oxide) |