Discrete Semiconductor Products

2N6232

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POWER BJT TO-5 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

POWER BJT TO-5 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6232

Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max [Max]	1.25 W
Supplier Device Package	TO-5AA
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package
Microchip Technology 2N6232	100 V	200 nA	1.25 W	TO-205AA TO-5-3 Metal Can	Through Hole	25 hFE	PNP	TO-5AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 42.30
Newark	Each	100	$ 42.30
		500	$ 40.65

General part information

Bipolar (BJT) Transistor PNP 100 V 10 A 1.25 W Through Hole TO-5AA

Technical documentation and resources