Discrete Semiconductor Products
STI28N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.135 OHM TYP., 22 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE
Discrete Semiconductor Products
STI28N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.135 OHM TYP., 22 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STI28N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1440 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs [Max] | 150 mOhm |
| Supplier Device Package | TO-262 (I2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.82 | |
| 30 | $ 2.23 | |||
| 120 | $ 1.91 | |||
| 510 | $ 1.70 | |||
| 1020 | $ 1.46 | |||
| 2010 | $ 1.37 | |||
| 5010 | $ 1.32 | |||
Description
General part information
STI28N60M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources