STPSC40065CWY
ActiveAUTOMOTIVE 650 V, 40 A DUAL SIC POWER SCHOTTKY DIODE
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STPSC40065CWY
ActiveAUTOMOTIVE 650 V, 40 A DUAL SIC POWER SCHOTTKY DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC40065CWY |
|---|---|
| Capacitance @ Vr, F | 1250 pF |
| Current - Reverse Leakage @ Vr | 300 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 131 | $ 11.68 | |
Description
General part information
STPSC40065C-Y Series
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
Documents
Technical documentation and resources