Specification	UPA1808GR-9JG-E1-A

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTSSOP (0.173", 4.40mm Width)
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-Power TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

UPA1808GR Series

N-Channel Mos Field Effect Transistor For Switching

Part	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	FET Type
Renesas Electronics Corporation UPA1808GR-9JG-E1-A	8-Power TSSOP	2 W	9.5 A	MOSFET (Metal Oxide)	660 pF	20 V	4 V	10 V	150 °C	2.5 V	30 V	Surface Mount	13 nC	17 mOhm	8-PowerTSSOP (0.173" 4.40mm Width)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3000	$ 0.87

General part information

The UPA1808GR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources