N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 8-Power TSSOP | 2 W | 9.5 A | MOSFET (Metal Oxide) | 660 pF | 20 V | 4 V | 10 V | 150 °C | 2.5 V | 30 V | Surface Mount | 13 nC | 17 mOhm | 8-PowerTSSOP (0.173" 4.40mm Width) | N-Channel |