Discrete Semiconductor Products

FDME910PZT

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -20V, -8A, 24MΩ

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Discrete Semiconductor Products

FDME910PZT

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -20V, -8A, 24MΩ

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDME910PZT

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	2110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUFDFN
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	MicroFet 1.6x1.6 Thin
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDME910PZT Series

P-Channel PowerTrench® MOSFET -20V, -8A, 24mΩ

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDME910PZT	20 V	8 A	MicroFet 1.6x1.6 Thin	P-Channel	24 mOhm	21 nC	2110 pF	Surface Mount	8 V	1.8 V 4.5 V	2.1 W	1.5 V	6-PowerUFDFN	-55 °C	150 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDME910PZT Series

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Documents

Technical documentation and resources