FDME910PZT Series

P-Channel PowerTrench® MOSFET -20V, -8A, 24mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -8A, 24mΩ

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDME910PZT	20 V	8 A	MicroFet 1.6x1.6 Thin	P-Channel	24 mOhm	21 nC	2110 pF	Surface Mount	8 V	1.8 V 4.5 V	2.1 W	1.5 V	6-PowerUFDFN	-55 °C	150 °C	MOSFET (Metal Oxide)

Catalog

P-Channel PowerTrench® MOSFET -20V, -8A, 24mΩ

Key Features

• Max rDS(on)= 24 mΩ at VGS = -4.5 V, ID= -8 A

• Max rDS(on)= 31 mΩ at VGS = -2.5 V, ID= -7 A

• Max rDS(on)= 45 mΩ at VGS = -1.8 V, ID= -6 A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

• HBM ESD protection level > 2 kV typical(Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.