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TO-252 DPAK
Discrete Semiconductor Products

NTD360N65S3H

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, FAST, 650 V, 10 A, 360 MΩ, DPAK

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TO-252 DPAK
Discrete Semiconductor Products

NTD360N65S3H

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, FAST, 650 V, 10 A, 360 MΩ, DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationNTD360N65S3H
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]17.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]916 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs360 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.12
10$ 2.03
100$ 1.41
500$ 1.14
1000$ 1.05
Digi-Reel® 1$ 3.12
10$ 2.03
100$ 1.41
500$ 1.14
1000$ 1.05
Tape & Reel (TR) 2500$ 1.00
NewarkEach (Supplied on Cut Tape) 1$ 2.94
10$ 1.99
25$ 1.82
50$ 1.65
100$ 1.48
250$ 1.38
500$ 1.26
1000$ 1.21
ON SemiconductorN/A 1$ 0.92

Description

General part information

NTD360N65S3H Series

SUPERFET III MOSFET is ON Semiconductor’s brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provides superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III FAST MOSFET series helpsminimize various power systems and improve system efficiency.