NTD360N65S3H Series

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTD360N65S3H	650 V	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	360 mOhm	30 V	10 A	916 pF	Surface Mount	17.5 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	TO-252 (DPAK)	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Key Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m Ω

• Internal Gate Resistance: 0.9 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provides superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III FAST MOSFET series helpsminimize various power systems and improve system efficiency.