Specification	MJF6388G

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	3000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Vce Saturation (Max) @ Ib, Ic	3 V
Vce Saturation (Max) @ Ib, Ic [custom]	10 A
Vce Saturation (Max) @ Ib, Ic [custom]	100 mA
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJF6388 Series

10 A, 100 V NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case
ON Semiconductor MJF6388G	10 µA	3000 hFE	150 °C	-65 °C	Through Hole	2 W	10 A	100 mA	3 V	100 V	TO-220FP	TO-220-3 Full Pack
ON Semiconductor MJF6388	10 µA	3000 hFE	150 °C	-65 °C	Through Hole	2 W	10 A	100 mA	3 V	100 V	TO-220FP	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.78
		50	$ 1.37
		100	$ 1.24
		500	$ 1.00
		1000	$ 0.92
		2000	$ 0.85
		5000	$ 0.83
ON Semiconductor	N/A	1	$ 0.88

Description

General part information

MJF6388 Series

The Bipolar Power Transistor is designed for general-purpose amplifier and switching applications, where mounting surface of the device is required to be electrically isolated from the heatsink or chassis.