MJF6388 Series

10 A, 100 V NPN Bipolar Power Transistor

Catalog

10 A, 100 V NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case
ON Semiconductor MJF6388G	10 µA	3000 hFE	150 °C	-65 °C	Through Hole	2 W	10 A	100 mA	3 V	100 V	TO-220FP	TO-220-3 Full Pack
ON Semiconductor MJF6388	10 µA	3000 hFE	150 °C	-65 °C	Through Hole	2 W	10 A	100 mA	3 V	100 V	TO-220FP	TO-220-3 Full Pack

Catalog

10 A, 100 V NPN Bipolar Power Transistor

Key Features

• Isolated Overmold Package, TO-220 Type

• Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107

• 100 VCEO(sus)

• 10 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain 1000 (Min) @ IC= 5.0 Adc

• High Isolation Voltage (up to 4500 VRMS)

• Case 221D is UL Recognized at 3500 VRMS: File #E69369

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for general-purpose amplifier and switching applications, where mounting surface of the device is required to be electrically isolated from the heatsink or chassis.