Discrete Semiconductor Products

NP109N04PUG-E1-AY

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MOSFET N-CH 40V 110A TO263-3

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Discrete Semiconductor Products

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MOSFET N-CH 40V 110A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	NP109N04PUG-E1-AY

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds	15750 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	220 W, 1.8 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	TO-263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Renesas Electronics Corporation NP109N04PUG-E1-AY	N-Channel	10 V	TO-263-3	270 nC	Surface Mount	15750 pF	20 V	175 °C	1.8 W 220 W	40 V	MOSFET (Metal Oxide)	110 A	2.3 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V
Renesas Electronics Corporation NP109N04PUK-E1-AY	N-Channel	10 V	TO-263 (D2PAK)		Surface Mount	10800 pF	20 V	175 °C	1.8 W 250 W	40 V	MOSFET (Metal Oxide)	110 A	1.75 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	189 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3

Technical documentation and resources