NP109N04 Series
Manufacturer: Renesas Electronics Corporation
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MOSFET N-CH 40V 110A TO263-3
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Operating Temperature | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | N-Channel | 10 V | TO-263-3 | 270 nC | Surface Mount | 15750 pF | 20 V | 175 °C | 1.8 W 220 W | 40 V | MOSFET (Metal Oxide) | 110 A | 2.3 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | |
Renesas Electronics Corporation | N-Channel | 10 V | TO-263 (D2PAK) | Surface Mount | 10800 pF | 20 V | 175 °C | 1.8 W 250 W | 40 V | MOSFET (Metal Oxide) | 110 A | 1.75 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | 189 nC |