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STFU10NK60Z
Discrete Semiconductor Products

STFU10NK60Z

Obsolete
STMicroelectronics

N-CHANNEL 600 V, 0.68 OHM TYP., 10 A SUPERMESH POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

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DocumentsTN1225+15
STFU10NK60Z
Discrete Semiconductor Products

STFU10NK60Z

Obsolete
STMicroelectronics

N-CHANNEL 600 V, 0.68 OHM TYP., 10 A SUPERMESH POWER MOSFET IN TO-220FP ULTRA NARROW LEADS PACKAGE

Deep-Dive with AI

DocumentsTN1225+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFU10NK60Z
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs750 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 142$ 2.20

Description

General part information

STFU10NK60Z Series

This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.