Discrete Semiconductor Products
STD9NM40N
NRNDSTMicroelectronics
N-CHANNEL 400 V, 0.73 OHM TYP., 5.6 A MDMESH(TM) II POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD9NM40N
NRNDSTMicroelectronics
N-CHANNEL 400 V, 0.73 OHM TYP., 5.6 A MDMESH(TM) II POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD9NM40N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.6 A |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 790 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.96 | |
Description
General part information
STD9NM40N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources