Discrete Semiconductor Products

R6024KNZC17

Active

600V 24A TO-3PF, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Measurement Method and Usage of Thermal Resistance RthJC +29

Discrete Semiconductor Products

R6024KNZC17

Active

Rohm Semiconductor

600V 24A TO-3PF, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data Measurement Method and Usage of Thermal Resistance RthJC +29

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6024KNZC17

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6024ENZ4 Series

600V 24A TO-263, High-speed switching Power MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	FET Type	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor R6024KNZC17	10 V	600 V	150 °C	45 nC	TO-3PF	24 A	165 mOhm	74 W	Through Hole	TO-3P-3 Full Pack	N-Channel	MOSFET (Metal Oxide)	20 V
Rohm Semiconductor R6024ENJTL	10 V	600 V	150 °C	70 nC	LPTS	24 A	165 mOhm		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	20 V	1650 pF	40 W
Rohm Semiconductor R6024ENZC17	10 V	600 V	150 °C	70 nC	TO-3PF	24 A	165 mOhm		Through Hole	TO-3P-3 Full Pack	N-Channel	MOSFET (Metal Oxide)	20 V	1650 pF	120 W
Rohm Semiconductor R6024ENZ4C13	10 V 15 V	600 V		70 nC	TO-247	24 A	165 mOhm		Through Hole	TO-247-3	N-Channel	MOSFET (Metal Oxide)	20 V		245 W
Rohm Semiconductor R6024KNZ4C13	10 V	600 V	150 °C	45 nC	TO-247	24 A	165 mOhm		Through Hole	TO-247-3	N-Channel	MOSFET (Metal Oxide)	20 V		245 W
Rohm Semiconductor R6024KNJTL	10 V	600 V		45 nC	LPTS	24 A	165 mOhm		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	20 V		245 W	-55 °C	150 °C
Rohm Semiconductor R6024KNX	10 V	600 V		45 nC	TO-220FM	24 A	165 mOhm	74 W	Through Hole	TO-220-3 Full Pack	N-Channel	MOSFET (Metal Oxide)	20 V			-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.03
		30	$ 4.04
		120	$ 3.38
		510	$ 2.89
		1020	$ 2.86

Description

General part information

R6024ENZ4 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.