Specification	NVTYS010N04CLTWG

Current - Continuous Drain (Id) @ 25°C	13 A, 43 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	32 W, 3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NVTYS010N04CL Series

MOSFET – Power, Single, N-Channel

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Grade	FET Type	Qualification	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVTYS010N04CLTWG	8-LFPAK56 SOT-1205	13 A 43 A	710 pF	3 W 32 W	4.5 V 10 V	9.5 mOhm	2.2 V	20 V	MOSFET (Metal Oxide)	Surface Mount	12 nC	40 V	Automotive	N-Channel	AEC-Q101	8-LFPAK	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 9.5 mΩ, 43 A

Technical documentation and resources