MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Grade | FET Type | Qualification | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 8-LFPAK56 SOT-1205 | 13 A 43 A | 710 pF | 3 W 32 W | 4.5 V 10 V | 9.5 mOhm | 2.2 V | 20 V | MOSFET (Metal Oxide) | Surface Mount | 12 nC | 40 V | Automotive | N-Channel | AEC-Q101 | 8-LFPAK | -55 °C | 175 ░C |