Specification	NGTG30N60FWG

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	170 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	167 W
Supplier Device Package	TO-247-3
Switching Energy	650 µJ, 650 µJ
Td (on/off) @ 25°C	81 ns, 190 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

NGTG30N60FWG Series

IGBT, 600 V, 30 A, PFC, Low Frequency

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	IGBT Type	Switching Energy	Supplier Device Package	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NGTG30N60FWG	167 W	60 A	81 ns 190 ns	Trench	650 µJ 650 µJ	TO-247-3	10 Ohm 15 V 30 A 400 V	170 nC	120 A	1.7 V	TO-247-3	600 V	Through Hole	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTG30N60FWG Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.