NGTG30N60FWG Series

IGBT, 600 V, 30 A, PFC, Low Frequency

Catalog

IGBT, 600 V, 30 A, PFC, Low Frequency

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	IGBT Type	Switching Energy	Supplier Device Package	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NGTG30N60FWG	167 W	60 A	81 ns 190 ns	Trench	650 µJ 650 µJ	TO-247-3	10 Ohm 15 V 30 A 400 V	170 nC	120 A	1.7 V	TO-247-3	600 V	Through Hole	-55 °C	150 °C

Catalog

IGBT, 600 V, 30 A, PFC, Low Frequency

Key Features

• Optimized for Very Low VCEsat

• Low Switching Loss

• 5µs Short Circuit Capability

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.