Discrete Semiconductor Products

SIHFZ48S-GE3

Active

MOSFET N-CH 60V 50A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 60V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFZ48S-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	190 W, 3.7 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs (Max)	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHFZ48S-GE3	Surface Mount	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4 V	18 mOhm	-55 °C	175 ░C	N-Channel	TO-263 (D2PAK)	50 A	3.7 W 190 W	110 nC	2400 pF	60 V
Vishay General Semiconductor - Diodes Division SIHFZ48RS-GE3	Surface Mount	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	4 V	18 mOhm	-55 °C	175 ░C	N-Channel	TO-263 (D2PAK)	50 A		110 nC	2400 pF	60 V	190 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 50A (Tc) 3.7W (Ta), 190W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources