SIHFZ48 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 50A D2PAK
| Part | Mounting Type | Vgs (Max) | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 20 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 4 V | 18 mOhm | -55 °C | 175 ░C | N-Channel | TO-263 (D2PAK) | 50 A | 3.7 W 190 W | 110 nC | 2400 pF | 60 V | |
Vishay General Semiconductor - Diodes Division | Surface Mount | 20 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 4 V | 18 mOhm | -55 °C | 175 ░C | N-Channel | TO-263 (D2PAK) | 50 A | 110 nC | 2400 pF | 60 V | 190 W |