L6498DTR
ActiveMOSFET AND POWER DRIVER 2.5A SINGLE HI/LO SIDE NON-INVERTING 8-PIN SOIC T/R
Deep-Dive with AI
Search across all available documentation for this part.
L6498DTR
ActiveMOSFET AND POWER DRIVER 2.5A SINGLE HI/LO SIDE NON-INVERTING 8-PIN SOIC T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | L6498DTR |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 2 A |
| Current - Peak Output (Source, Sink) [custom] | 2.5 A |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 500 V |
| Input Type | CMOS, TTL |
| Logic Voltage - VIL, VIH | 1.45 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 25 ns |
| Rise / Fall Time (Typ) [custom] | 25 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6498 Series
The L6498 is a high voltage device manufactured with the BCD6 "OFF-LINE" technology. It is a single chip half-bridge gate driver for the N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing control units such as microcontrollers or DSP.
Both device outputs can sink 2.5 A and source 2 A, making the L6498 particularly suited for medium and high capacity power MOSFETs\IGBTs.
Documents
Technical documentation and resources
