SQJ208EP-T1_GE3

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MOSFET 2N-CH 40V 20A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ208EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	60 A, 20 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	33 nC
Gate Charge (Qg) (Max) @ Vgs	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1700 pF, 3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W, 27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.9 mOhm, 9.4 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V, 2.4 V

Part	Grade	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Configuration	Qualification	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQJ208EP-T1_GE3	Automotive	2.3 V 2.4 V	20 A 60 A	1700 pF 3900 pF	Surface Mount	MOSFET (Metal Oxide)	3.9 mOhm 9.4 mOhm	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric	2 N-Channel (Dual)	AEC-Q101	27 W 48 W	-55 °C	175 ░C	33 nC	75 nC	40 V

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General part information

Mosfet Array 40V 20A (Tc), 60A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources