SQJ208 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 40V 20A PPAK SO8
| Part | Grade | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Configuration | Qualification | Power - Max | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Automotive | 2.3 V 2.4 V | 20 A 60 A | 1700 pF 3900 pF | Surface Mount | MOSFET (Metal Oxide) | 3.9 mOhm 9.4 mOhm | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual Asymmetric | 2 N-Channel (Dual) | AEC-Q101 | 27 W 48 W | -55 °C | 175 ░C | 33 nC | 75 nC | 40 V |