Discrete Semiconductor Products
FDB0190N807L
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 80 V, 270 A, 0.0013 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Discrete Semiconductor Products
FDB0190N807L
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 80 V, 270 A, 0.0013 OHM, TO-263 (D2PAK), SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB0190N807L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 270 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 249 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 19110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) | 250 W, 3.8 W |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm |
| Supplier Device Package | TO-263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.45 | |
| 10 | $ 4.34 | |||
| 100 | $ 3.15 | |||
| Digi-Reel® | 1 | $ 6.45 | ||
| 10 | $ 4.34 | |||
| 100 | $ 3.15 | |||
| Tape & Reel (TR) | 800 | $ 2.66 | ||
| Newark | Each (Supplied on Full Reel) | 500 | $ 2.83 | |
| ON Semiconductor | N/A | 1 | $ 2.45 | |
Description
General part information
FDB0190N807L Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Documents
Technical documentation and resources