FDB0190N807L Series

N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor FDB0190N807L	19110 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	80 V	D2PAK TO-263-7	3.8 W 250 W	10 V	249 nC	8 V 10 V	Surface Mount	270 A	4 V	TO-263-7	N-Channel	1.7 mOhm	20 V

Catalog

N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ

Key Features

• Max rDS(on)= 1.7 mΩ at VGS= 10 V, ID= 34 A

• Max rDS(on)= 2 mΩ at VGS= 8 V, ID= 31 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely LowRDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.